2009. 6. 15 1/4 semiconductor technical data KMB8D0P30QA p-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for load switch and battery pack. features v dss =-30v, i d =-8a. drain to source on resistance. r ds(on) =20m (max.) @ v gs =-10v r ds(on) =35m (max.) @ v gs =-4.5v mosfet maximum ratings (ta=25 unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ note1) surface mounted on 1 ? 1 ? fr4 board, t 10sec. 1 2 3 4 8 7 6 5 s s s g d d d d 1 2 3 4 8 7 6 5 kmb8d0p 30qa pin connection (top view) characteristic symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current dc@ta=25 (note 1) i d -8 a pulsed i dp -40 a drain power dissipation @ta=25 (note 1) p d 2.5 w maximum junction temperature t j 150 storage temperature range t stg -55~150 thermal resistance, junction to ambient (note 1) r thja 50 /w
2009. 6. 15 2/4 KMB8D0P30QA revision no : 0 electrical characteristics (ta=25 ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =-250 a -30 - - v drain cut-off current i dss v gs =0v, v ds =-24v - - -1 a gate to source leakage current i gss v gs = 20v, v ds =0v - - 100 na gate to source threshold voltage v th v ds =v gs, i d =-250 a -1.0 - -3.0 v drain to source on resistance r ds(on) v gs =-10v, i d =-8a (note2) - 15 20 m v gs =-4.5v, i d =-5a (note2) - 25 35 forward transconductance g fs v ds =-5v, i d =-8a (note2) - 6 - s dynamic input capaclitance c iss v ds =-15v, v gs =0v, f=1mhz (note2) - 1371 - pf ouput capacitance c oss - 295 - reverse transfer capacitance c rss - 176 - total gate charge v gs =10v q g v ds =-15v, v gs =-10v, i d =-8a (note2) - 28.2 - nc v gs =4.5v - 15.0 - gate to source charge q gs - 5.0 - gate to drain charge q gd - 6.4 - turn-on delay time t d(on) v ds =-15v, v gs =-10v i d =-8a, r g =1.6 (note2) - 11.2 - ns turn-on rise time t r - 5.8 - turn-off delay time t d(off) - 65.0 - turn-off fall time t f - 25.0 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =-1.7a (note2) - -0.75 -1.2 v note2) pulse test : pulse width 300 , duty cycle 2%
2009. 6. 15 3/4 KMB8D0P30QA revision no : 0 0 30 40 10 20 50 -40 0-10-2 0-30 drain current i d (a) drain to source on resistance r ds(on) (m ? ) fig2. r ds(on) - i d gate to source voltage v gs (v) fig1. i d - v ds drain to source voltage v ds (v) 0 0 -20 -10 -30 -40 -1.0 -0.5 -1.5 -2.5 -2.0 -3.0 -10 -30 0 -20 -40 -3 -4 0-1-2 -5 fig3. i d - v gs drain current i d (a) drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 175 150 125 100 0 normalized gate to source threshold voltage fig5. v th - t j -75 -50 -25 0.4 0.6 0.2 1.6 0.8 1.0 1.4 1.2 0.6 0.8 0.2 0.4 1.0 1.2 1.8 1.4 2.0 1.6 050100 25 175 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c -4.0v -3.5v -3.0v v ds = v gs, i d = -250 a t j =25 c t j =-55 c t j =150 c v gs =-10v, i d =-19a v gs =-4.5v, i d =-18a v gs =-4.5v v gs =-10v v gs =-10v -5.0v -4.5v fig6. i s - v sd reverse drain current i s (a) 10 -2 10 -1 10 0 10 1 10 2 0.6 1.2 1.0 0.4 0.8 0.2 source to drain voltage v sd (v) t j =25 c t j =-55 c t j =150 c
2009. 6. 15 4/4 KMB8D0P30QA revision no : 0 drain to source voltage v ds (v) capacitance c (pf) fig8. c - v ds -25 -10 -15 0-5 -20 -30 10 1 10 2 10 4 10 3 gate to charge q g (nc) 0 -10 -6 -2 -4 -8 10 20 30 040 fig9. v gs - q g gate to source voltage v gs (v) i d = -8a gate to source voltage v gs (v) fig7. r ds(on) - v gs -6 -2 -4 -8 -10 0 10 50 30 40 20 drain to source on resistance r ds(on) (m ? ) t j =150 c i d =-8a f=1mhz t j =25 c drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area r ds( on ) l imit dc 100ms 10ms 1ms 100us 10 1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 1 10 -4 fig11. transient thermal response curve 10 -1 10 -2 10 -3 normalized effective transient thermal resistance t 1 t 2 p dm r thja =63.9 c/w 0.02 0.1 0.01 0.2 0.5 0.05 v gs = -10v single pulse t a = 25 c -10 -2 -10 -2 -10 -1 -10 -1 -10 0 -10 0 -10 1 -10 1 -10 2 -10 2 single pulse c oss c rss c iss square wave pulse duration t w (sec)
|
